| PART |
Description |
Maker |
| UT6716470-WCA UT6716470-WCC UT6716455-WCC UT671645 |
8K X 8 STANDARD SRAM, 55 ns, CDFP28
8K X 8 STANDARD SRAM, 55 ns, CDIP28
32 Mb (2M x 16, 4M x 8) MirrorBit, Flash Memory 静态存储器| 8KX8 |的CMOS | RAD数据通信硬|计划生育| 28脚|陶瓷
4 Mb (512K x 8, 256K x 16) Boot Sector, Flash Memory
64 Mb (4M x 16) Boot Sector, Flash Memory
SRAM|8KX8|CMOS| RAD HARD|FP|28PIN|CERAMIC
|
Maxim Integrated Products, Inc.
|
| HY6264 HY6264-10 HY6264-12 HY6264-15 HY6264-70 HY6 |
8KX8-Bit CMOS SRAM
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDSO28
x8 SRAM 8K X 8 STANDARD SRAM, 70 ns, PDIP28
x8 SRAM 8K X 8 STANDARD SRAM, 85 ns, PDSO28
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| CY7C261-45TMB CY7C263-45DMB CY7C261-35LMB CY7C261- |
EPROM|8KX8|CMOS|FP|24PIN|CERAMIC
EPROM|8KX8|CMOS|DIP|24PIN|CERAMIC 存储器| 8KX8 |的CMOS |双酯| 24针|陶瓷
8K x 8 Power-Switched and Reprogrammable PROM
|
Glenair, Inc.
Cypress Semiconductor
|
| DS1225Y DS1225Y-170 |
NVRAM (Battery Based) NVRAM中（基于电池
64K Nonvolatile SRAM
IC,NOVRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
|
Maxim Integrated Products, Inc.
Dallas
|
| AS7C31024A-10JI AS7C31024A-10STC AS7C31024A-10STI |
4-Bit Synchronous Binary Counters 16-VQFN -40 to 85
4-Bit Synchronous Binary Counters 16-TSSOP -40 to 85
128 x 64 pixel format, LED or EL Backlight available
8-Bit Parallel-Out Serial Shift Registers 14-SOIC -40 to 85
BZ Series Standard Basic Switch, Single Pole Double Throw Circuitry, 15 A at 125 Vac, Pin Plunger Actuator, 2,5 N - 3,61 N [9 oz -13 oz] Operating Force, Silver Contacts, Screw Termination, CE, CSA, DEMKO, UL
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout) 128K X 8 STANDARD SRAM, 15 ns, PDSO32
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout) 128K X 8 STANDARD SRAM, 12 ns, PDSO32
Replaced by SN74LV164A : 8-Bit Parallel-Out Serial Shift Register 14-SOIC -40 to 85 128K X 8 STANDARD SRAM, 20 ns, PDSO32
RES, SMD, 4.22K OHM, 1%, 1/10W, RMF
BZ Series Standard Basic Switch, Single Pole Double Throw Circuitry, 15 A at 125 Vac, Overtravel Plunger Actuator, 2,5 N - 3,61 N [9 oz -13 oz] Operating Force, Silver Contacts, Screw Termination, CE, CSA, DEMKO, U
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| BS62LV1600ECG70 BS62LV1600ECG55 BS62LV1600FCP55 BS |
Very Low Power CMOS SRAM 2M X 8 bit 极低功耗CMOS SRAMx 8
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PBGA48
Very Low Power CMOS SRAM 2M X 8 bit 2M X 8 STANDARD SRAM, 55 ns, PDSO44
|
BRILLIANCE SEMICONDUCTOR INC
BRILLIANCE SEMICONDUCTOR, Inc.
Brilliance Semiconducto...
|
| UPD4416016G5-A15-9JF UPD4416016G5-A17-9JF UPD44160 |
1M X 16 STANDARD SRAM, 15 ns, PDSO54
CONNECTOR ACCESSORY
16M-BIT CMOS FAST SRAM 1M-WORD BY 16-BIT
|
NEC Corp.
NEC[NEC]
|
| IDT6168LA15PI IDT6168LA IDT6168SA 6168LA_DS_9916 I |
5.0V, 4k X 4, CMOS, Asynchronous, Static RAM
From old datasheet system
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDIP20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDSO20
CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 25 ns, CQCC20
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| IDT6116LA IDT6116SA IDT6116SA20TDB IDT6116SA20SO I |
From old datasheet system
2K X 8 STANDARD SRAM, 35 ns, PDSO24 0.300 INCH, SOJ-24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDSO24
2K X 8 STANDARD SRAM, 35 ns, PDSO24 0.300 INCH, SOIC-24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 35 ns, PDSO24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 45 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 25 ns, PDIP24
CMOS STATIC RAM 16K (2K x 8 BIT) 2K X 8 STANDARD SRAM, 20 ns, PDIP24
|
http://
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| UT62L25616MC-55LI UT62L25616BS-55LI UT62L25616BS-5 |
256K X 16 BIT LOW POWER CMOS SRAM 256 × 16位低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc.
ETC
List of Unclassifed Manufacturers
|
| UT62256SC-70 UT62256 UT62256SC-35 UT62256SC-35L UT |
32K X 8 BIT LOW POWER CMOS SRAM 32K的8位低功耗CMOS SRAM
From old datasheet system
|
UTRON Technology
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
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